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Zhenqiang Ma

Zhenqiang Ma

Lynn H. Matthias Professor in Engineering
Vilas Distinguished Achievement Professor

Zhenqiang (Jack) Ma is a Lynn H. Matthias Professor in Engineering and a Vilas Distinguished Achievement Professor in the Department of Electrical and Computer Engineering at the University of Wisconsin-Madison. He received his B.S. degree in applied physics and B.E. degree in electrical engineering from Tsinghua University in Beijing, China in 1991. He received his M.S. degree in nuclear science and M.S.E. degree in electrical engineering from the University of Michigan-Ann Arbor in 1997, and his Ph.D. degree in electrical engineering from the University of Michigan-Ann Arbor in 2001. Before he joined academia, he worked in semiconductor industry for a year. His present research interests focus on physics, materials, and applications to lattice/crystal structure-mismatched abrupt heterojunctions based on 3D semiconductor materials. He has been actively working on microwave flexible electronics since 2005. In collaboration with biomedical engineering faculty and medical school physicians, he is investigating micro-structured scaffolds for human stem cell-based vision restoration, and special electrodes for neuroprosthesis and neuronmodulation. He has published over 300 journal papers and supervised/advised 60 scientists/postdocs/Ph.Ds. He is a recipient of PECASE and a fellow of AAAS, AIMBE, APS, IEEE, NAI, OPTICA, and SPIE.

Department

Electrical & Computer Engineering

Contact

3445, Engineering Hall
1415 Engineering Dr
Madison, WI

  • PhD 2001, Univ. of Michigan
  • M.S.E. 1997, Univ. of Michigan
  • MS 1997, Univ. of Michigan
  • BE 1991, Tsinghua University
  • BS 1991, Tsinghua University

  • Lattice mis-matched semiconductor heterostructures: materials, physics and related various device applications
  • Flexible/stretchable/wearable electronics/optoelectronics
  • Bioelectronics (ECG/ECoG), neural and neuron interface engineering
  • High-speed RF devices, optoelectronic devices and nanophotonics
  • Semiconductor materials processing and heterogeneous integration
  • Flexible electronics, flexible optoelectronics and flexible photonics
  • Energy conversion semiconductor devices
  • Bioelectronics and biomimetics
  • Semiconductor device physics
  • Power electronics

  • 2023 GomacTech, The George Abraham Outstanding Paper Award
  • 2020 International Society for Optical Engineering (SPIE), Fellow
  • 2020 Springer Nature, Outstanding Paper Award, Microsystems and Nanoengineering
  • 2018 Albert Nelson Marquis Lifetime Achievement Award
  • 2018 American Association for the Advancement of Science (AAAS), Fellow
  • 2018 American Institute for Medical and Biological Engineering (AIMBE), Fellow
  • 2018 Institute of Electrical and Electronics Engineers (IEEE), Fellow
  • 2018 Optical Society of America (OSA), Fellow
  • 2017 American Physical Society (APS), Fellow
  • 2017 National Academy of Inventors (NAI), Fellow/Member
  • 2017 Secretary of the Air Force, Hemispherical optoelectronic sensor was showcased to the Secretary of the Air Force
  • 2016 University of Wisconsin-Madison, Kellett Mid-career Award
  • 2016 Wisconsin Alumni Research Foundation, Finalist (1/6) of WARF Innovation Award (Nominated)
  • 2015 Popular Mechanics , Popular Mechanics Breakthrough Award
  • 2014 Electrical and Computer Engineering, University of Wisconsin-Madison, Lynn H. Matthias Endowment Professorship
  • 2013 AFOSR, AFOSR 60 Years Anniversary featured article
  • 2013 AFOSR , AFOSR 60 Years Anniversary featured article and picture
  • 2013 Advanced Functional Materials, Article featured on the front cover
  • 2013 Photonics Journal, Article featured on the front cover
  • 2013 University of Wisconsin-Madison, Vilas Associate Award
  • 2013 University of Wisconsin-Madison, Vilas Distinguished Achievement Professorship
  • 2012 University of Wisconsin-Madison, H. I. Romnes Fellowship
  • 2011 Tsinghua University, Honored Alumnus, Centennial Celebration
  • 2011 Semiconductor Science and Technology, Article featured on the front cover
  • 2010 Small, Article featured on the front cover
  • 2010 AFSOR, Curved 3-dimensional photodetector array device was selected by AFOSR and submitted to US Congress
  • 2009 Chicago General Consulate, Honored guest of Celebration of 60th National Day of P. R. China
  • 2009 Applied Physics Letters, Photo and article featured as the front cover
  • 2008 The White House, 2007 Presidential Early Career Award for Scientists and Engineers (PECASE)
  • 2008 SiRF’08, Best Paper Award: 2nd Place
  • 2008 AFRL Nanoscience Technologies Applications, Transitions and Innovations, Featured story, “Nano-membrane flexible electronics for surveillance radar”,
  • 2008 AFSOR, Record-speed flexible electronics chip was selected by AFOSR and submitted to US Congress
  • 2008 Defense Advanced Research Projects Agency (DARPA), Young Faculty Award
  • 2007 MIT’s Technology Review , MIT’s Technology Review TR35 nomination invitation (Nominated)
  • 2006 SiRF’06, Best Paper Award: 4th Place
  • 2005 International Semiconductor Device Research Symposium (ISDRS’05), Best Paper Award
  • 2004 MIT’s Technology Review, Member of MIT’s Technology Review Research Panel
  • 2004 SiRF’04, Finalist of Best Paper Award (as advisor)
  • 2002 National Aeronautics and Space Administration (NASA), 2002 Collaborative Distinguished Publication
  • 1994 The Ohio State University, University Fellowship
  • 1993 Tsinghua University, Best Student Mentor Award
  • 1992 Tsinghua University, 12·9 Award
  • 1992 Tsinghua University, 5·4 Youth Medal
  • 1991 Tsinghua University, Excellent Graduate Award (the highest honor)
  • 1987 Tsinghua University, Excellent Student Fellowships

  • Wang, G., Xie, S., Li, Y., Zhang, W., Vigen, J., Shih, T., Lin, Q., Gong, J., Ma, Z., Pasayat, S. S., & Gupta, C. (2024). Demonstration of Near-Size-Independent External Quantum Efficiency for 368 nm UV Micro-LEDs. Physica Status Solidi - Rapid Research Letters, 18(11) https://doi.org/10.1002/pssr.202400119
  • Zhou, J., Gong, J., Sheikhi, M., Dheenan, A., Wang, Q., Abbasi, H., Liu, Y., Adamo, C., Marshall, P., Wriedt, N., Cheung, C., Li, Y., Qiu, S., Li, X., Khee Ng, T., Gan, Q., Gambin, V., Ooi, B. S., Rajan, S., & Ma, Z. (2024). Synthesis and characteristics of a monocrystalline GaAs/β-Ga2O3 p-n heterojunction. Applied Surface Science, 663 https://doi.org/10.1016/j.apsusc.2024.160176
  • Zhou, J., Wang, H., Huang, P. R., Xu, S., Liu, Y., Gong, J., Shen, J., Vicent, D., Haessly, S., Abrand, A., Mohseni, P. K., Kim, M., Yu, S. Q., Chang, G. E., Gong, X., & Ma, Z. (2024). GaAs/GeSn/Ge n-i-p diodes and light emitting diodes formed via grafting. Journal of Vacuum Science and Technology B, 42(4) https://doi.org/10.1116/6.0003619
  • Gong, J., Kim, D., Jang, H., Alema, F., Wang, Q., Zhou, J., Li, Y., Ng, T. K., Qiu, S., Liu, Y., Sheikhi, M., Lu, Y., Singh, R., Su, X., Abbasi, H. N., Lin, Q., Xie, S., Chabak, K., Jessen, G., Cheung, C., Gambin, V., Pasayat, S. S., Osinsky, A., Ooi, B. S., Gupta, C., & Ma, Z. (2024). Characteristics of grafted monocrystalline Si/β-Ga2O3 p-n heterojunction. Applied Physics Letters, 124(26) https://doi.org/10.1063/5.0208744
  • Vidrio, R., Vincent, D., Bachman, B., Saucedo, C., Zahedian, M., Xu, Z., Lai, J., Grotjohn, T. A., Kolkowitz, S., Seo, J. H., Hamers, R. J., Ray, K. G., Ma, Z., & Choy, J. T. (2024). XPS analysis of molecular contamination and sp2 amorphous carbon on oxidized (100) diamond. Materials for Quantum Technology, 4(2) https://doi.org/10.1088/2633-4356/ad4e8a
  • Gong, J., Zhou, J., Dheenan, A., Sheikhi, M., Alema, F., Ng, T. K., Pasayat, S. S., Gan, Q., Osinsky, A., Gambin, V., Gupta, C., Rajan, S., Ooi, B. S., & Ma, Z. (2024). Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) p-n heterojunction determined by X-ray photoelectron spectroscopy. Applied Surface Science, 655 https://doi.org/10.1016/j.apsusc.2024.159615
  • Gong, J., Su, X., Qiu, S., Zhou, J., Liu, Y., Li, Y., Kim, D., Tsai, T. H., Ng, T. K., Ooi, B. S., & Ma, Z. (2024). Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN. Journal of Applied Physics, 135(11) https://doi.org/10.1063/5.0188768
  • Xie, S., Alam, M. T., Gong, J., Lin, Q., Sheikhi, M., Zhou, J., Alema, F., Osinsky, A., Pasayat, S. S., Ma, Z., & Gupta, C. (2024). 0.86 kV p-Si/(001)-Ga2O3Heterojunction Diode. IEEE Electron Device Letters, 45(3), 444-447 https://doi.org/10.1109/LED.2024.3352515
  • Xie, S., Sheikhi, M., Xu, S., Alam, M. T., Zhou, J., Mawst, L., Ma, Z., & Gupta, C. (2024). p-GaAs/n-Ga2O3 heterojunction diode with breakdown voltage of ∼800 V. Applied Physics Letters, 124(7) https://doi.org/10.1063/5.0181056
  • Lee, J., Kim, S. H., Zhang, H., Min, S., Choe, G., Ma, Z., & Jung, Y. H. (2024). Design and Fabrication of Stretchable Microwave Transmission Lines Based on a Quasi-Microstrip Structure. ACS Applied Materials and Interfaces, 16(4), 4896-4903 https://doi.org/10.1021/acsami.3c14493

  • E C E 790 - Master's Research (Spring 2025)
  • E C E 890 - Pre-Dissertator's Research (Spring 2025)
  • E C E 990 - Dissertator's Research (Spring 2025)
  • E C E 399 - Independent Study (Fall 2024)
  • E C E 790 - Master's Research (Fall 2024)
  • E C E 890 - Pre-Dissertator's Research (Fall 2024)
  • E C E 990 - Dissertator's Research (Fall 2024)
  • E C E 890 - Pre-Dissertator's Research (Summer 2024)
  • E C E 990 - Dissertator's Research (Summer 2024)
  • E C E 340 - Electronic Circuits I (Spring 2024)
  • E C E 399 - Independent Study (Spring 2024)
  • E C E 890 - Pre-Dissertator's Research (Spring 2024)
  • E C E 990 - Dissertator's Research (Spring 2024)
  • E C E 399 - Independent Study (Fall 2023)
  • E C E 445 - Semiconductor Physics and Devices (Fall 2023)
  • E C E 790 - Master's Research (Fall 2023)
  • E C E 890 - Pre-Dissertator's Research (Fall 2023)
  • E C E 990 - Dissertator's Research (Fall 2023)
  • E C E 399 - Independent Study (Summer 2023)
  • E C E 790 - Master's Research (Summer 2023)
  • E C E 890 - Pre-Dissertator's Research (Summer 2023)
  • E C E 990 - Dissertator's Research (Summer 2023)