March 24
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12:00 PM
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1:00 PM
Development of Novel III–V Semiconductor Heterostructures: Overcoming Physical Limits
Alex Honghyuk Kim
Abstract: Recent advances in the epitaxial growth of III–V compound semiconductors have enabled high-performance electronic and photonic devices. However, conventional III–V and III–N material systems remain fundamentally limited by intrinsic physical and chemical constraints, including substrate-dependent lattice and bandgap properties. These limitations hinder progress in emerging applications such as neuromorphic photonics, monolithic integration with silicon photonics, and full-color micro-LED arrays. In this talk, strategies to overcome these intrinsic limitations will be discussed, with a focus on the development of novel III–V compound semiconductor material systems enabled by precise control of lattice mismatch, phase stability, and miscibility gaps. The role of metalorganic vapor phase epitaxy (MOVPE) in kinetic material design will be highlighted, together with the realization of chemically and physically metastable III–V heterostructures beyond conventional epitaxial limits.
Bio: Alex Honghyuk Kim is an Assistant Professor in the School of Semiconductor Convergence Engineering at Hanyang University, South Korea. He received his Ph.D. in Electrical and Computer Engineering from the University of Wisconsin–Madison, where his research focused on the epitaxial growth of III–V compound semiconductors for advanced optoelectronic applications. His research interests include MOVPE-based epitaxy of III–V compound semiconductor materials, metastable heterostructures, and the design and characterization of advanced optoelectronic devices. Prior to joining Hanyang University, he held research positions at Lumileds LLC, Northwestern University, and the Korea Photonics Technology Institute. He has authored and coauthored over 30 peer-reviewed journal papers and currently serves as a co-principal investigator on multiple nationally funded semiconductor research projects.