
Solid-state electronics and quantum technologies
Solid-state electronics powers today’s information technology. Researchers in this area design and fabricate next-generation electronic devices and develop techniques for processing information using such devices. Current research topics include wide-bandgap semiconductor devices for power and high-speed radio-frequency devices, a wide range of semiconductors and their heterostructures for optoelectronics, flexible and printed electronics, bioelectronics, two-dimensional semiconductor devices, as well as micro- and nano-electromechanical devices and systems. ECE researchers in this area are also engaged in new cross-disciplinary efforts on campus in the emerging field of quantum science and engineering. Research is supported by state-of-art facilities for clean-room fabrication and characterization, which are operated by the Wisconsin Centers for Nanoscale Technology.
Faculty
- Joseph Andrews
- Dan Botez
- Jen Choy
- Chirag Gupta
- Robert Jacobberger
- Hongrui Jiang
- Mikhail Kats
- Irena Knezevic
- Zhenqiang Ma
- Luke Mawst
- Shubhra Pasayat
- Eric Tervo
- Jennifer Volk – starting January 2025
- Dan van der Weide
- Ying Wang
- Zongfu Yu
Research labs and facilities
- Andrews Laboratory for Printed Electronics and Sensors
- Kats Research Group
- Mawst Laboratory
- Nanoscale Quantum Materials and Devices Research Group
- Photonics Lab at UW-Madison
- Quantum Transport Theory and Simulation Research Group
- Wide-Bandgap Materials and Devices Lab
- Wisconsin Centers for Nanoscale Technology

Illuminating the next generation of semiconductors and LEDs
Located in a lab within Engineering Hall, PhD student Qinchen is using a microscope to locate the devices on a test wafer. Needle probes are then used to supply electrical signals to light-emitting diodes to observe their optical behavior. These light-emitting diodes (LEDs) and LASERs use Gallium Nitride and its alloys to produce Ultraviolet, visible and Infrared light as shown at the top of this page. ECE researchers are focused on the design and growth of gallium nitride and related materials, which are wide- and ultra-wide-bandgap semiconductors.